Transistor
2SD2179
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1446
6.9鹵0.1
0.15
Unit: mm
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.5
4.5鹵0.1
0.45
鈥?.05
2.5鹵0.1
0.7
4.0
s
Features
q
q
q
0.65 max.
1.0 1.0
Low collector to emitter saturation voltage V
CE(sat)
.
Complementary pair with 2SB1446.
Allowing supply with the radial taping.
0.2
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
50
50
5
7
5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
+0.1
s
Absolute Maximum Ratings
0.45
鈥?.05
+0.1
(Ta=25藲C)
2.5鹵0.5
2.5鹵0.5
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 500mA
*2
V
CE
= 2V, I
C
= 2.5A
*2
I
C
= 2A, I
B
= 100mA
*2
I
C
= 2A, I
B
= 100mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
50
50
5
120
60
0.19
0.85
80
60
*2
min
typ
max
0.1
14.5鹵0.5
Unit
碌A(chǔ)
V
V
V
340
0.3
1.2
V
V
MHz
70
pF
Pulse measurement
*1
h
FE1
Rank classification
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
1
2
3
