2SD2167
Transistors
Power Transistor (31鹵4V, 2A)
2SD2167
!Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due
to low loads.
4) P
C
=2
W (on 40脳40脳0.7mm ceramic board)
!External
dimensions
(Units : mm)
4.0
1.0
2.5
0.5
1.5
0.4
(1)
3.0
0.5
(3)
4.5
1.6
(2)
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
ROHM : MPT3
EIAJ : SC-62
!Absolute
maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
31鹵4
31鹵4
5
2
3
0.5
2
150
鈭?5 鈭?+150
Unit
V
V
V
A(DC)
A(Pulse)
鈭?/div>
1
W
W
鈭?/div>
2
擄C
擄C
鈭?/div>
1 Pw=20ms , duty=1 / 2
鈭?/div>
2 When mounted on a 40
脳
40
脳
0.7 mm ceramic board.
!Packaging
specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
鈭?/div>
Denotes h
FE
2SD2167
MPT3
NPQ
DL
鈭?/div>
T100
1000
!Electrical
characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
鈭?/div>
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
27
27
5
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
56
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
0.25
鈭?/div>
100
25
Max.
35
35
鈭?/div>
1
1
1
0.5
270
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A
碌A
V
V
鈭?/div>
MHz
pF
I
C
=
50碌A
I
C
=
1mA
I
E
=
50碌A
V
CB
=
20V
V
EB
=
5V
I
C
/I
B
=
2A/0.2A
I
C
/I
B
=
1A/50mA
Conditions
0.4
1.5
鈭?/div>
鈭?/div>
鈭?/div>
V
CE
/I
C
=
3V/0.5A
V
CE
=
3V , I
E
= 鈭?.5A
, f= 30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
1/1
2SD2167T100P 產(chǎn)品屬性
1,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
2A
31V
1V @ 200mA，2A
-
82 @ 500mA，3V
2W
100MHz
表面貼裝
TO-243AA
MPT3
帶卷 (TR)
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