DATA SHEET
SILICON POWER TRANSISTOR
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2165 is a single power transistor developed especially
for high h
FE
. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its h
FE
is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
PACKAGE DRAWING (UNIT: mm)
10.0 鹵0.3
4.5 鹵0.2
蠁
3.2 鹵0.2
2.7 鹵0.2
15.0 鹵0.3
3 鹵0.1
4 鹵0.2
mounting cost reduction.
FEATURES
鈥?High h
FE
and low V
CE(sat)
:
h
FE
鈮?/div>
1,300 TYP. (V
CE
= 5.0 V, I
C
= 1.0 A)
V
CE(SAT)
鈮?/div>
0.3 V TYP. (I
C
= 3.0 A, I
B
= 30 mA)
鈥?Mold package that does not require an insulating board or
insulation bushing
2.54 TYP.
0.7 鹵0.1
13.5 MIN.
12.0 鹵0.2
insulation package, thus contributing to high-density mounting and
1.3 鹵0.2
1.5 鹵0.2
2.54 TYP.
2.5 鹵0.1
0.65 鹵0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation (T
C
= 25擄C)
Total power dissipation (T
A
= 25擄C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
P
T
T
j
T
stg
Ratings
100
100
7.0
6.0
10
Note
Unit
1 2 3
V
V
V
A
A
A
W
W
擄C
擄C
Electrode Connection
1. Base
2. Collector
3. Emitter
1.0
30
2.0
150
鈭?5
to +150
Note
PW
鈮?/div>
300
碌
s, duty cycle
鈮?/div>
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13178EJ3V0DS00 (3rd edition)
Date Published March 2004 N CP(K)
Printed in Japan
The mark
shows major revised points.
c
2002
NEC
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