Power Transistors
2SD2158, 2SD2158A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s
Features
q
q
0.7鹵0.1
Unit: mm
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
4.2鹵0.2
q
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD2158
2SD2158A
2SD2158
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25擄C
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
80
100
60
80
6
4
2
0.5
20
2
150
鈥?5 to +150
Unit
V
16.7鹵0.3
14.0鹵0.5
emitter voltage 2SD2158A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Junction temperature
Storage temperature
V
V
A
A
A
W
藲C
Solder Dip
4.0
7.5鹵0.2
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD2158
2SD2158A
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
Conditions
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 300mA
I
C
= 1A, I
B
= 25mA
I
C
= 1A, I
B
= 25mA
V
CE
= 12V, I
C
= 200mA, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 1A, I
B1
= 25mA, I
B2
= 鈥?5mA,
V
CC
= 50V
40
30
0.6
2.5
1
60
80
500
2500
1
1.2
V
V
MHz
pF
碌s
碌s
碌s
min
typ
max
100
100
100
100
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SD2158
2SD2158A
V
CEO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
FE
Rank classification
Q
P
O
h
FE
500 to 1000 800 to 1500 1200 to 2500
Rank
1
1
2
3
