Power Transistors
2SD2151
Silicon NPN epitaxial planar type
For power switching
Unit: mm
0.7鹵0.1
s
Features
q
q
q
q
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
4.2鹵0.2
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of foward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
130
80
7
20
10
30
2
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
Solder Dip
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
14.0鹵0.5
4.0
s
Absolute Maximum Ratings
16.7鹵0.3
7.5鹵0.2
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 6A
I
C
= 6A, I
B
= 0.3A
I
C
= 10A, I
B
= 1A
I
C
= 6A, I
B
= 0.3A
I
C
= 10A, I
B
= 1A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 6A, I
B1
= 0.6A, I
B2
= 鈥?0.6A,
V
CC
= 50V
20
0.5
2.0
0.2
80
45
90
30
0.5
1.5
1.5
2.5
V
V
V
V
MHz
碌s
碌s
碌s
260
min
typ
max
10
50
Unit
碌A(chǔ)
碌A(chǔ)
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
1
1
2
3
