Power Transistors
2SD2138, 2SD2138A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1418 and 2SB1418A
5.0鹵0.1
Unit: mm
q
q
2.5鹵0.2
High forward current transfer ratio h
FE
which has satisfactory linearity
Allowing supply with the radial taping
(T
C
=25藲C)
Ratings
60
80
60
80
5
4
2
15
2
150
鈥?5 to +150
Unit
V
13.0鹵0.2
4.2鹵0.2
s
10.0鹵0.2
1.0
Features
90擄
1.2鹵0.1
18.0鹵0.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD2138
2SD2138A
2SD2138
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C1.0
2.25鹵0.2
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
C1.0
emitter voltage 2SD2138A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
2.5鹵0.2
1 2 3
2.5鹵0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
W
藲C
藲C
E
B
C
s
Electrical Characteristics
(T
C
=25藲C)
Parameter
Symbol
I
CBO
I
CEO
I
EBO
2SD2138
2SD2138A
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
off
Conditions
V
CE
= 60V, I
E
= 0
V
CE
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 2A
V
CE
= 4V, I
C
= 2A
I
C
= 2A, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 2A, I
B1
= 8mA, I
B2
= 鈥?mA,
V
CC
= 50V
20
0.4
4
60
80
1000
2000
10000
2.8
2.5
V
V
MHz
碌s
碌s
min
typ
max
100
100
100
100
100
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
2SD2138
2SD2138A
2SD2138
2SD2138A
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
*
h
FE2
Rank classification
Q
P
2000 to 5000 4000 to 10000
Rank
h
FE2
1
1
2
