Power Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2138 and 2SD2138A
13.0鹵0.2
4.2鹵0.2
5.0鹵0.1
10.0鹵0.2
1.0
Unit: mm
s
Features
q
q
q
High foward current transfer ratio h
FE
High-speed switching
Allowing automatic insertion with radial taping
(T
C
=25藲C)
Ratings
鈥?0
鈥?0
鈥?0
鈥?0
鈥?
鈥?
鈥?
15
2.0
150
鈥?5 to +150
Unit
V
90擄
2.5鹵0.2
1.2鹵0.1
C1.0
2.25鹵0.2
18.0鹵0.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB1418
2SB1418A
2SB1418
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
C1.0
1 2 3
emitter voltage 2SB1418A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
2.5鹵0.2
2.5鹵0.2
V
A
A
W
藲C
藲C
B
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
E
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB1418
2SB1418A
2SB1418
2SB1418A
2SB1418
2SB1418A
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
off
Conditions
V
CB
= 鈥?0V, I
B
= 0
V
CB
= 鈥?0V, I
B
= 0
V
CE
= 鈥?0V, I
B
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 1MHz
I
C
= 鈥?A, I
B1
= 鈥?mA, I
B2
= 8mA,
V
CC
= 鈥?0V
20
0.2
2
鈥?0
鈥?0
1000
2000
10000
鈥?.8
鈥?.5
V
V
MHz
碌s
碌s
min
typ
max
鈥?00
鈥?00
鈥?00
鈥?00
鈥?00
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
*
h
FE2
Rank classification
Q
P
Rank
h
FE2
2000 to 5000 4000 to 10000
1
1
2
