Power Transistors
2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2137 and 2SD2137A
Unit: mm
s
Features
q
q
q
Parameter
Collector to
base voltage
Collector to
2SB1417
2SB1417A
2SB1417
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?0
鈥?0
鈥?0
鈥?0
鈥?
鈥?
鈥?
15
2.0
150
鈥?5 to +150
Unit
V
2.5鹵0.2
s
Absolute Maximum Ratings
13.0鹵0.2
4.2鹵0.2
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Allowing automatic insertion with radial taping
(T
C
=25藲C)
5.0鹵0.1
10.0鹵0.2
1.0
90擄
1.2鹵0.1
C1.0
2.25鹵0.2
18.0鹵0.5
Solder Dip
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
emitter voltage 2SB1417A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
C1.0
1 2 3
2.5鹵0.2
2.5鹵0.2
W
藲C
藲C
1:Base
2:Collector
3:Emitter
MT4 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB1417
2SB1417A
2SB1417
2SB1417A
2SB1417
2SB1417A
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 鈥?0V, V
BE
= 0
V
CE
= 鈥?0V, V
BE
= 0
V
CE
= 鈥?0V, I
B
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?0.375A
V
CE
= 鈥?V, I
C
= 鈥?0.2A, f = 10MHz
I
C
= 鈥?A, I
B1
= 鈥?0.1A, I
B2
= 0.1A,
V
CC
= 鈥?0V
30
0.3
1.0
0.2
鈥?0
鈥?0
70
10
鈥?.8
鈥?.2
V
V
MHz
碌s
碌s
碌s
250
min
typ
max
鈥?00
鈥?00
鈥?00
鈥?00
鈥?00
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
Note: Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the rank classification.
1
1
2
3
