鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?
鈭?
鈭?
1.5
150
鈭?5
to
+150
Unit
V
V
V
A
A
W
擄C
擄C
2.5
鹵0.2
0.8 C
1
2
3
0.5
鹵0.1
2.05
鹵0.2
0.4
鹵0.1
2.5
鹵0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-emitter cutoff current (E-B short)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
V
BE
I
CES
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
= 鈭?0
mA, I
B
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?0
V, V
BE
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.375A
V
CB
= 鈭?
V, I
E
=
0.1 A, f
=
200 MHz
I
C
= 鈭?
A, I
B1
= 鈭?/div>
0.1 A, I
B2
=
0.1 A
270
0.5
1.2
0.3
40
10
鈭?.2
V
MHz
碌s
碌s
碌s
Min
鈭?0
鈭?.8
鈭?00
鈭?00
鈭?
250
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
P
40 to 90
Q
70 to 150
R
120 to 250
Publication date: March 2003
SJD00071BED
1
1
2
3
