Transistor
2SD2071
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SB1377
6.9鹵0.1
1.05 2.5鹵0.1
鹵0.05
Unit: mm
(1.45)
0.8
0.15
0.7
4.0
q
q
q
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
50
50
7
1
500
1
150
鈥?5 ~ +150
V
V
V
A
mA
W
藲C
藲C
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2.5鹵0.1
Parameter
Symbol
Ratings
Unit
1
2
3
0.45
鈥?.05
+0.1
s
Absolute Maximum Ratings
0.45
鈥?.05
+0.1
(Ta=25藲C)
2.5鹵0.5
2.5鹵0.5
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= 鈥?0mA
V
CB
= 10V, I
E
= 0, f = 1MHz
50
50
7
85
40
160
90
0.35
1.1
200
6
*2
min
typ
max
0.1
14.5鹵0.5
Low collector to emitter saturation voltage V
CE(sat)
.
Output of 1W is obtained with a complementary pair with
2SB1377.
Allowing supply with the radial taping.
0.65 max.
1.0 1.0
0.2
0.5
4.5鹵0.1
s
Features
Unit
碌A(chǔ)
V
V
V
340
0.6
1.5
V
V
MHz
15
pF
Pulse measurement
*1
h
FE
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
1
2
3
