Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
s
q
q
Features
Incorporating a built-in damper diode
Reduction of a parts count and simplification of a circuit are al-
lowed
High breakdown voltage with high reliability
High-speed switching
Wide area of safe operation (ASO)
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
1500
1500
7
20
5
4
100
3
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
藲C
藲C
21.0鹵0.5
15.0鹵0.2
0.7
15.0鹵0.3
11.0鹵0.2
5.0鹵0.2
3.2
蠁3.2鹵0.1
Solder Dip
q
q
q
16.2鹵0.5
3.2 2.3
q
2.0鹵0.2
1.1鹵0.1
2.0鹵0.1
0.6鹵0.2
5.45鹵0.3
10.9鹵0.5
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
TOP鈥? Full Pack Package(b)
Internal Connection
C
B
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time (L-load)
Fall time (L-load)
Diode forward voltage
(T
C
=25藲C)
Symbol
I
CBO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 10V, I
C
= 5A
I
C
= 5A, I
B
= 1.2A
I
C
= 5A, I
B
= 1.2A
V
CE
= 10V, I
C
= 1A, f = 0.5MHz
I
C
= 5A, I
B1
= 1.2A, I
B2
= 鈥?.2A,
L
leak
= 5碌H
I
C
= 鈥?A, I
B
= 0
2
12
0.8
鈥?.3
7
4.5
15
8
1.5
V
V
MHz
碌s
碌s
V
min
typ
max
30
300
Unit
碌A
碌A
V
1
1
2
