Power Transistors
2SD2052
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1361
Unit: mm
q
q
q
q
q
16.2鹵0.5
12.5
3.5
Solder Dip
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
Wide area of safe operation (ASO)
High transition frequency f
T
Optimum for the output stage of a HiFi audio amplifier
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
150
150
5
15
9
100
3
150
鈥?5 to +155
Unit
V
V
V
A
A
W
藲C
藲C
0.7
s
Features
15.0鹵0.3
11.0鹵0.2
5.0鹵0.2
3.2
21.0鹵0.5
15.0鹵0.2
蠁3.2鹵0.1
2.0鹵0.2
2.0鹵0.1
1.1鹵0.1
5.45鹵0.3
10.9鹵0.5
1
2
3
0.6鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
TOP鈥? Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 150V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
V
CE
= 5V, I
C
= 7A
I
C
= 7A, I
B
= 0.7A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
20
150
20
60
20
1.8
2.0
V
V
MHz
pF
200
min
typ
max
50
50
Unit
碌A(chǔ)
碌A(chǔ)
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
S
80 to 160
P
100 to 200
Rank
h
FE2
1
1
2
3
4
