Darlington
2SD2017
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=300V
V
EB
=20V
I
C
=25mA
V
CE
=2V, I
C
=2A
I
C
=2A, I
B
=2mA
I
C
=2A, I
B
=2mA
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
2SD2017
100
max
10
max
250
min
2000
min
1.5
max
2.0
max
20
typ
65
typ
V
V
MHz
pF
13.0min
Equivalent
circuit
B
C
( 4k
鈩?
E
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2017
300
250
20
6
1
35(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25擄C)
Unit
External Dimensions
FM20(TO220F)
4.0
鹵0.2
10.1
鹵0.2
4.2
鹵0.2
2.8 c0.5
碌
A
V
16.9
鹵0.3
8.4
鹵0.2
mA
1.35
鹵0.15
1.35
鹵0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
鹵0.2
2.4
鹵0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
100
R
L
(鈩?
50
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
5
I
B2
(mA)
鈥?0
t
on
(
碌
s)
0.6typ
t
stg
(
碌
s)
16.0typ
t
f
(
碌
s)
3.0typ
2.54
3.9
B C E
I
C
鈥?V
C E
Characteristics
(Typical)
m
A
V
CE
( sat ) 鈥?I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sat)
( V )
3
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
( V
C E
=2 V )
6
6
40
20
mA
8m
A
4m
A
5
C o l l e c t o r Cu r r e n t I
C
( A )
5
C o l l e c t or C u r r e n t I
C
( A)
2mA
4
1mA
2
4
3
Tem
p)
(Ca
se
藲C
3
鹵0.2
0.8
鹵0.2
a
b
酶3.3
鹵0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
=8A
1
I
C
=3A
I
C
=1A
1
25藲C
(Cas
2
I
B
= 0 .4
mA
2
1
0
0
1
2
3
4
5
6
0
0 . 2 0 .5
1
5
10
50 1 00
5 00 1 00 0
0
0
1
B a s e - Em i t t o r Vo l ta g e V
B E
( V)
鈥?0藲C
125
e Te
mp)
(Case
Temp
)
2
Co ll e ct o r -Em i t t er Vo l t ag e V
C E
(V )
Bas e C ur r e nt I
B
( m A)
h
FE
鈥?I
C
Characteristics
(Typical)
(V
C E
=2 V)
10000
5000
D C C u r r e n t Gai n h
F E
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
( V
C E
= 2 V)
10000
DC C u r r e nt Ga i n h
FE
5000
Transient Thermal Resistance
胃
j -a
( 藲C / W )
5
胃
j - a
鈥?t Characteristics
Typ
1
C
25藲
25
藲C
1000
500
1000
500
鈥?
0藲C
1
100
50
30
0.03
100
50
30
0.03
0.5
0.3
0. 1
0 .5
1
5 6
0. 1
0. 5
1
56
1
5
10
50
Time t(ms)
10 0
5 0 0 1 0 00
C ol l ec t or C urr en t I
C
(A)
C ol l ec t or C ur r en t I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
30
20
10
Safe Operating Area
(Single Pulse)
35
Pc 鈥?Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Typ
C ut- off F r eq u e n c y f
T
( M H
Z
)
Co lle ct o r C u r re n t I
C
( A )
5
m
D.
s
C
(T
20
C
=
25
C)
Ma x imu m P ow e r D i s s i p a t i on P
C
( W )
10
30
1m
s
W
ith
1
0 .5
20
In
fin
ite
he
1 5 0 x 1 5 0x 2
1 0 0 x 1 0 0x 2
10
50x50x2
Without Heatsink
at
si
10
nk
0 .1
0.05
0
鈥?.02 鈥?.05 鈥?0. 1
0.02
3
Without Heatsink
Natural Cooling
鈥? .5
鈥?
鈥? 鈥?
5
10
50
100
30 0
2
0
0
25
50
75
100
1 25
1 50
Emi t t e r Cu rre nt I
E
(A)
Co ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( 藲 C )
142
SANKEN
1
