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2SD1994AR Datasheet

  • 2SD1994AR

  • TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | SIP

  • 4頁(yè)

  • ETC

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Transistors
2SD1994A
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency power amplification and driver amplification
0.15
6.9鹵0.1
0.7
4.0
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
Complementary to 2SB1322A
I
Features
鈥?/div>
Low collector to emitter saturation voltage V
CE(sat)
鈥?/div>
Output of 2 W to 3 W is obtained with a complementary pair with
2SB1322A
鈥?/div>
Allowing supply with the radial taping
0.65 max.
1.0 1.0
0.2
0.45
鈭?.05
+0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
60
50
5
1.5
1
1
150
鈭?5
to
+150
cm
2
Unit
V
V
V
A
A
W
擄C
擄C
1.2鹵0.1
0.65
max.
0.45
+
0.1
鈭?/div>
0.05
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
Note) *: Printed circuit board: Copper foil area of 1
or more, and the
board thickness of 1.7 mm for the collector portion
2.5鹵0.1
I
Absolute Maximum Ratings
T
a
=
25擄C
1
2
3
0.45
鈭?.05
+0.1
2.5鹵0.5
2.5鹵0.5
(HW Type)
I
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
*1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
*2
Conditions
V
CB
=
20 V, I
E
=
0
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CE
=
10 V, I
C
=
500 mA
V
CE
=
5 V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
= 0,
f
=
1 MHz
Min
Typ
Max
0.1
14.5鹵0.5
0.5
4.5鹵0.1
Unit
碌A(chǔ)
V
V
V
60
50
5
85
50
100
0.2
0.85
200
11
20
0.4
1.2
340
Collector to emitter saturation voltage
*1
Base to emitter saturation voltage
*1
Transition frequency
*1
Collector output capacitance
Note) *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
85 to 170
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
V
MHz
pF
R
120 to 240
S
170 to 340
No-rank
85 to 340
Product of no-rank is not classified and have no indication for rank.
1

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