Transistor
2SD1993
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9鹵0.1
1.05 2.5鹵0.1
(1.45)
鹵0.05
0.8
q
q
q
0.45
鈥?.05
+0.1
(Ta=25藲C)
1
2
3
0.45
鈥?.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.5鹵0.5
2.5鹵0.5
+0.1
Ratings
55
55
7
200
100
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
2.5鹵0.1
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
200
150
55
55
7
210
650
1.0
V
MHz
mV
min
typ
max
100
1
Unit
nA
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
R
210 ~ 340
S
290 ~ 460
T
360 ~ 650
h
FE
Rank
14.5鹵0.5
0.85
Low noise voltage NV.
High foward current transfer ratio h
FE
.
Allowing supply with the radial taping.
0.65 max.
1.0
3.5鹵0.1
0.8
s
Features
0.15
0.7
4.0
1
1
2
3
