Transistor
2SD1991A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1320A
6.9鹵0.1
Unit: mm
1.05 2.5鹵0.1
(1.45)
鹵0.05
0.8
q
q
q
0.45
鈥?.05
0.45
鈥?.05
+0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
1
2.5鹵0.5
2
2.5鹵0.5
3
60
50
7
200
100
400
150
鈥?5 ~ +150
V
V
V
mA
mA
mW
藲C
藲C
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
2.5鹵0.1
Ratings
Unit
+0.1
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 2V, I
C
= 100mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
50
7
160
90
0.1
150
3.5
0.3
V
MHz
pF
460
min
typ
max
1
1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
FE1
Rank classification
Q
160 ~ 260
R
210 ~ 340
S
290 ~ 460
Rank
h
FE1
14.5鹵0.5
0.85
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
Allowing supply with the radial taping.
0.65 max.
1.0
3.5鹵0.1
s
Features
0.15
0.7
4.0
0.8
1
1
2
3
4
