2SD2195 / 2SD1980 / 2SD1867
Transistors
Power Transistor (100V , 2A)
2SD2195 / 2SD1980 / 2SD1867
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1580 / 2SB1316.
External dimensions
(Units : mm)
2SD2195
1.0
1.5
0.4
4.0
2.5
0.5
(1)
3.0
0.5
(3)
1.5
0.4
1.5
4.5
1.6
(2)
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SD2195
Collector
power
dissipation
2SD1980
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
100
100
6
2
3
2
1
10
1
150
鈭?5~+150
ROHM : MPT3
EIAJ : SC-62
Unit
V
V
V
A(DC)
A(Pulse)
鈭?
W
鈭?
W(Tc=25擄C)
W
擄C
擄C
鈭?
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1)
2.3
0.9
0.75
2SD1980
0.4
5.5
1.5
5.1
(2)
0.9
(3)
2.3
0.65
2SD1867
Junction temperature
Storage temperature
Tj
Tstg
C0.5
1.0
0.5
0.5
1.5
2.5
9.5
2.3
鈭?/div>
1 Single pulse Pw
=
100ms
鈭?/div>
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
鈭?/div>
3
Printed circuit board, 1.7mm thick, collector plating 100mm
2
or larger.
0.8Min.
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
鈭?/div>
Denotes h
FE
ROHM : CPT3
EIAJ : SC-63
2SD1867
ATV
1k~10k
鈭?/div>
TV2
2500
2SD2195
MPT3
1k~10k
DP
鈭?/div>
T100
1000
2SD1980
CPT3
1k~10k
鈭?/div>
TL
2500
2SD1867
6.8
2.5
Equivalent circuit
C
0.65Max.
1.0
14.5
0.5
B
(1)
(2)
2.54
(3)
2.54
1.05
0.45
R
1
R
1
3.5k鈩?/div>
R
2
300鈩?/div>
R
2
E
B : Base
C : Collector
E : Emitter
0.9
Taping specifications
4.4
ROHM : ATV
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag
DC current
transfer ratio
Output capacitance
鈭?/div>
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
Cob
Min.
100
100
鈭?/div>
鈭?/div>
鈭?/div>
1000
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
25
Max.
鈭?/div>
鈭?/div>
10
3
1.5
10000
鈭?/div>
Unit
V
V
碌A
mA
V
鈭?/div>
pF
Conditions
I
C
=
50碌A
I
C
=
5mA
V
CB
=
100V
V
EB
=
5V
I
C
=
1A , I
B
=
1mA
V
CE
=
2V , I
C
=
1A
V
CB
=
10V , I
E
=
0A , f
=
1MHz
鈭?/div>
鈭?/div>
6.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Emitter
(2) Collector
(3) Base
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