Transistor
2SD1937
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1297
5.0鹵0.2
Unit: mm
4.0鹵0.2
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
120
120
5
1
0.5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1 2 3
2.54鹵0.15
1.27
0.45
鈥?.1
1.27
+0.15
13.5鹵0.5
0.7鹵0.1
0.7鹵0.2
q
High collector to emitter voltage V
CEO
.
Optimum for the driver-stage of a low-frequency and 40 to 60W
output amplifier.
Allowing supply with the radial taping.
8.0鹵0.2
s
Features
0.45
鈥?.1
+0.15
2.3鹵0.2
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 0.1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 5V, I
C
= 500mA
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
20
min
120
5
130
50
1
1.2
V
V
MHz
pF
330
typ
max
Unit
V
V
*
h
FE1
Rank classification
R
130 ~ 220
S
185 ~ 330
Rank
h
FE1
1
1
2
