Transistor
2SD1934
Silicon NPN epitaxial planer type
For low-frequency power amplification
For stroboscope
5.0鹵0.2
Unit: mm
4.0鹵0.2
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
40
20
7
8
5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1 2 3
2.54鹵0.15
2.3鹵0.2
0.45
鈥?.1
1.27
1.27
+0.15
13.5鹵0.5
0.7鹵0.1
0.7鹵0.2
q
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Allowing supply with the radial taping.
8.0鹵0.2
s
Features
0.45
鈥?.1
+0.15
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
=
2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
*2
min
typ
max
0.1
0.1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
20
7
230
150
1
150
50
600
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
230 ~ 380
R
340 ~ 600
Rank
h
FE1
1
1
2
