Power Transistors
2SD1893
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1253
15.0鹵0.3
11.0鹵0.2
Unit: mm
5.0鹵0.2
3.2
s
Features
q
q
q
q
16.2鹵0.5
12.5
3.5
Solder Dip
Optimum for 40W HiFi output
High foward current transfer ratio h
FE
: 5000 to 30000
Low collector to emitter saturation voltage V
CE(sat)
: <2.5V
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
130
110
5
10
6
50
3
150
鈥?5 to +150
Unit
V
V
V
A
A
W
0.7
21.0鹵0.5
15.0鹵0.2
蠁3.2鹵0.1
2.0鹵0.2
2.0鹵0.1
1.1鹵0.1
5.45鹵0.3
10.9鹵0.5
1
2
3
0.6鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
TOP鈥? Full Pack Package(a)
Internal Connection
C
B
藲C
藲C
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 130V, I
E
= 0
V
CE
= 110V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 5mA
I
C
= 5A, I
B
= 5mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 5A, I
B1
= 5mA, I
B2
= 鈥?mA,
V
CC
= 50V
20
1.4
4.5
0.8
110
2000
5000
30000
2.5
3.0
V
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
100
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
Rank classification
Q
P
Rank
h
FE2
5000 to 15000 8000 to 30000
1
1
2
3
