Power Transistors
2SD1892
Silicon NPN triple diffusion planar type Darlington
For power amplification
0.7鹵0.1
Complementary to 2SB1252
Unit: mm
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
4.2鹵0.2
7.5鹵0.2
s
Features
q
q
q
q
14.0鹵0.5
Optimum for 35W HiFi output
High foward current transfer ratio h
FE
: 5000 to 30000
Low collector to emitter saturation voltage V
CE(sat)
: <2.5V
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
120
100
5
8
5
45
2
150
鈥?5 to +150
Unit
V
V
V
A
A
W
16.7鹵0.3
蠁3.1鹵0.1
4.0
1.4鹵0.1
1.3鹵0.2
Solder Dip
0.5
鈥?.1
0.8鹵0.1
+0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.54鹵0.25
5.08鹵0.5
1
2
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
3
Internal Connection
C
B
藲C
藲C
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 120V, I
E
= 0
V
CE
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 4mA
I
C
= 4A, I
B
= 4mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 4mA, I
B2
= 鈥?mA,
V
CC
= 50V
20
2.5
3.5
1.0
100
2000
5000
30000
2.5
3.0
V
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
100
Unit
碌A
碌A
碌A
V
Rank classification
Q
P
Rank
h
FE2
5000 to 15000 8000 to 30000
1
1
2
3
