2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features
1) High breakdown voltage.(BV
CEO
=
160V)
2) Low collector output capacitance.
(Typ. 20pF at V
CB
=
10V)
3) High transition frequency.(f
T
=
80MH
Z
)
4) Complements the 2SB1275 / 2SB1236A.
!External
dimensions
(Units : mm)
2SD2211
1.0
1.5
0.4
(1)
4.0
2.5
0.5
3.0
0.5
(3)
1.5
0.4
1.5
4.5
1.6
(2)
ROHM : MPT3
EIAJ : SC-62
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Absolute
maximum ratings
(Ta = 25擄C)
0.75
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SD1857A
Collector
power
dissipation
2SD2211
2SD1918
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
160
160
5
1.5
3
1
2
1
10
150
鈭?5 鈭?150
Unit
V
V
V
A(DC)
A(Pulse)
W
W
W(Tc=25擄C)
擄C
擄C
鈭?
鈭?
鈭?
1.0
0.5
0.5
2SD1918
5.5
1.5
(3) (2) (1)
2.3
0.9
0.4
0.9
0.65
2.3
P
C
1.5
2.5
9.5
Junction temperature
Storage temperature
Tj
Tstg
2.3
0.8Min.
5.1
6.5
C0.5
鈭?/div>
1 Single pulse Pw=100ms
鈭?/div>
2
Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger
.
鈭?/div>
3
When mounted on a 40 x 40 x 0.7mm ceramic board.
ROHM : CPT3
EIAJ : SC-63
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SD1857A
6.8
2.5
!Packaging
specifications and h
FE
0.65Max.
1.0
0.9
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
*
Denotes h
FE
2SD2211
MPT3
QR
DQ*
T100
1000
2SD1918 2SD1857A
CPT3
Q
鈭?/div>
TL
2500
ATV
PQ
鈭?/div>
TV2
2500
(1) (2) (3)
2.54 2.54
0.5
1.05
14.5
4.4
0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
!Electrical
characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
2SD2211,2SD1918
h
FE
2SD1857A
f
T
Cob
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Min.
160
160
5
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Max.
鈭?/div>
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
鈭?/div>
鈭?/div>
Conditions
I
C
=
50碌A(chǔ)
I
C
=
1mA
I
E
=
50碌A(chǔ)
V
CB
=
120V
V
EB
=
4V
I
C
/I
B
=
1A/0.1A
I
C
/I
B
=
1A/0.1A
V
CE
/I
C
=
5V/0.1A
V
CE
=
5V , I
E
= 鈭?/div>
0.1A , f
=
30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
1
1
2
1.5
390
270
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
120
82
鈭?/div>
鈭?/div>
transfer ratio
Transition frequency
Output capacitance
鈭?/div>
Measured using pulse current.
80
20
MHz
pF
2SD1857AP相關(guān)型號(hào)PDF文件下載
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