Transistor
2SD1821, 2SD1821A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
Unit: mm
s
Features
q
q
q
2.1鹵0.1
0.425
1.25鹵0.1
0.425
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
Ratings
150
185
150
185
5
100
50
150
150
鈥?5 ~ +150
Unit
0.65
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1821
2SD1821A
2SD1821
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
0.2
0.9鹵0.1
V
0.7鹵0.1
0 to 0.1
0.2鹵0.1
emitter voltage 2SD1821A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
P
(2SD1821)
L
(2SD1821A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
2SD1821
2SD1821A
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 100碌A(chǔ), I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
150
2.3
150
150
185
5
130
330
1
V
MHz
pF
mV
min
typ
max
1
Unit
碌A(chǔ)
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
*
h
FE
Rank classification
Rank
h
FE
R
130 ~ 220
2SD1821
2SD1821A
PR
LR
S
185 ~ 330
PS
LS
Marking
Symbol
0.15
鈥?.05
+0.1
0.3
鈥?
+0.1
1
1
2
3
