Built-in Avalanche Diode
for Surge Absorbing
Darlington
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD1796
60鹵10
60鹵10
6
4
0.5
25(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
2SD1796
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=50V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=10mA
V
CE
=12V, I
E
=鈥?.2A
V
CB
=10V, f=1MHz
2SD1796
10
max
10
max
60鹵10
2000
min
1.5
max
60
typ
45
typ
V
MHz
pF
13.0min
Equivalent
circuit
B
C
(3 k
鈩?(15
0鈩? E
Application :
Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25擄C)
Unit
External Dimensions
FM20(TO220F)
4.0
鹵0.2
10.1
鹵0.2
4.2
鹵0.2
2.8 c0.5
碌
A
V
16.9
鹵0.3
8.4
鹵0.2
mA
1.35
鹵0.15
1.35
鹵0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
鹵0.2
2.4
鹵0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(鈩?
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
10
I
B2
(mA)
鈥?0
t
on
(
碌
s)
1.0typ
t
stg
(
碌
s)
4.0typ
t
f
(
碌
s)
1.5typ
2.54
3.9
B C E
鹵0.2
0.8
鹵0.2
a
b
酶3.3
鹵0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
0m
A
A
1.0m
V
CE
( sat ) 鈥?I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sat)
( V )
3
I
C
鈥?V
BE
Temperature Characteristics
(Typical)
( V
CE
= 2 V )
4
4
=2
I
B
0.8m
A
C o l l e c t o r Cu r r e n t I
C
( A )
0. 5m A
2
Co l l e c t o r Cu r r e n t I
C
( A)
3
0 .6 m A
3
p)
4A
25藲C (C
a
1
0.3mA
1
0
0
1
2
3
4
0
0.2
0 .5
1
5
10
50
100
0
0
125藲C
1
I
C
= 1A
1
B as e- Em i t t or V o l t a g e V
BE
( V )
鈥?0藲C (C
I
C
= 2 A
(Cas
I
C
= 3 A
ase Tem
2
I
C
=
2
e Tem
0. 4m A
se Tem
p)
p)
2
Col l e ct o r- Em i tte r V ol ta ge V
C E
(V )
Ba s e C ur r en t I
B
( m A)
h
FE
鈥?I
C
Characteristics
(Typical)
( V
C E
=4 V)
20000
D C C u r r e n t 氓Ga i n h
FE
10000
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
( V
C E
= 4 V)
20000
10000
5000
125
藲C
胃
j - a
鈥?t Characteristics
Transient Thermal Resistance
胃
j -a
( 藲C /W )
5
Typ
5000
DC C ur r e nt 氓 Ga i n h
F E
1000
500
1000
500
藲C
25
0藲C
鈥?
1
V
C B
= 10 V
I
E
=鈥?2 V
0.5
1
10
Time t(ms)
100
10 0 0
100
50
0.05
0.1
0.5
1
4
Co l le ct o r Curre nt I
C
(A )
100
50
0 .0 5
0.1
0. 5
1
4
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
=1 0 V)
120
10
Safe Operating Area
(Single Pulse)
30
10
Pc 鈥?Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
1m
100
C ut- off F r e q u e n c y f
T
( M H
Z
)
Co lle ct o r C u r r e n t I
C
( A )
s
80
DC
Typ
60
1
0.5
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
5
10
s
m
0m
s
fin
150x150x2
1 0 0x
1 0
10
0x
2
ite
he
at
40
si
nk
Without Heatsink
Natural Cooling
0.1
0 .0 5
50x50x2
Without Heatsink
2
20
0
鈥?.01
鈥?0. 1
鈥?
鈥?
3
5
10
50
1 00
0
0
25
50
75
100
125
1 50
Emi t t e r C u rre nt I
E
(A )
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
Am b i e n t T e m p er a t u r e T a( 藲 C )
138
SANKEN
1
