2SD1759 / 2SD1861
Transistors
Power transistor (40V, 2A)
2SD1759 / 2SD1861
!
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k鈩?resistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.
!
External dimensions
(Units : mm)
2SD1759
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
!
Equivalent circuit
1.0
0.5
C
0.5
1.0
0.9
14.5
4.4
1.5
2.5
9.5
B
ROHM : CPT3
EIAJ : SC-63
4k鈩?/div>
R
BE
(1) Base
(2) Collector
(3) Emitter
C : Collector
B : Base
E : Emitter
E
2SD1861
6.8
2.5
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SD1861
2SD1759
P
C
Tj
Tstg
Symbol
V
CBO
V
CER
V
EBO
I
C
Limits
40
40
5
2
3
1
1
10
150
鈭?5~+150
Unit
V
V(R
BE
=10k鈩?
V
A(DC)
鈭?
A(Pulse)
W
W(T
C
=25擄C)
擄C
擄C
鈭?
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05
2.3
0.45
0.8Min.
Taping specifications
ROHM : ATV
鈭?
Single pulse P
W
=10ms
鈭?
Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
(1) Emitter
(2) Collector
(3) Base
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD1759
CPT3
1k~200k
TL
2500
2SD1861
ATV
1k~
TV2
2500
!
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Cob
Min.
40
40
5
鈭?/div>
鈭?/div>
鈭?/div>
1000
1000
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
11
Max.
鈭?/div>
鈭?/div>
鈭?/div>
1
1
1.5
20000
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
鈭?/div>
鈭?/div>
pF
Conditions
I
C
=50碌A(chǔ)
I
C
=1mA
, R
BE
=10k鈩?/div>
I
E
=50碌A(chǔ)
V
CB
=24V
V
EB
=4V
I
C
/I
B
=0.6mA/1.2mA
V
CE
/I
C
=3V/0.5A
V
CB
=10V
, I
E
=0A
, f=1MHz
DC current
transfer ratio
Output capacitance
2SD1759
2SD1861
5.1
6.5
C0.5
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