2SD1757K
Transistors
Power Transistor (15V, 0.5A)
2SD1757K
!
Features
1) Low V
CE(sat)
. (Typ.8mV at I
C
/I
B
= 10/1mA)
2) Optimal for muting.
!
External dimensions
(Units : mm)
(1)
0.4
(3)
!
Absolute maximum ratings
(Ta = 25擄C)
0.15
1.6
2.8
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
15
6.5
0.5
0.2
150
鈭?5~+150
Unit
V
V
V
A
W
擄C
擄C
0.3to0.6
0to0.1
Each lead has same dimensions
0.8
1.1
0.95 0.95
1.9
2.9
(2)
ROHM : SMT3
EIAJ : SC-59
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
* Denotes h
FE
2SD1757K
SMT3
QRS
AA *
T146
3000
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
15
6.5
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.1
-
150
15
Max.
-
-
-
0.5
0.5
0.4
560
-
-
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
-
MHz
pF
I
C
= 50碌A(chǔ)
I
C
= 1mA
I
E
= 50碌A(chǔ)
V
CB
= 20V
V
EB
= 4V
I
C
/I
B
= 500mA/50mA
V
CE
/I
C
= 3V/100mA
V
CE
= 5V , I
E
=
鈭?0mA
, f = 100MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Conditions
1
2
