Power Transistors
2SD1755
Silicon NPN epitaxial planar type
Unit: mm
7.0鹵0.3
3.5鹵0.2
For power amplification with high forward current transfer ratio
7.2鹵0.3
0.8鹵0.2
3.0鹵0.2
1.0鹵0.2
q
q
q
High forward current transfer ratio h
FE
which has satisfactory
linearity
High emitter to base voltage V
EBO
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
10.0
鈥?.
+0.3
s
Features
1.1鹵0.1
0.75鹵0.1
0.85鹵0.1
0.4鹵0.1
2.3鹵0.2
4.6鹵0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5鹵0.2
2.0鹵0.2
7.0鹵0.3
Unit: mm
0 to 0.15
Ratings
100
60
15
12
6
3
15
1.3
150
鈥?5 to +150
Unit
V
10.2鹵0.3
7.2鹵0.3
V
V
A
A
3.0鹵0.2
1.0 max.
2.5
0.75鹵0.1
1.1鹵0.1
0.5 max.
0.9鹵0.1
0 to 0.15
A
1
2
3
W
2.3鹵0.2
藲C
藲C
4.6鹵0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 15V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
I
C
= 5A, I
B
= 0.1A
V
CE
= 12V, I
C
= 0.5A, f = 10MHz
I
C
= 5A, I
B1
= 0.1A, I
B2
= 鈥?0.1A,
V
CC
= 50V
0.3
1.5
0.6
50
60
300
2000
0.5
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
Unit
碌A(chǔ)
碌A(chǔ)
V
*
h
FE
Rank classification
Q
P
Rank
h
FE
300 to 1200 800 to 2000
2.5鹵0.2
1.0
2.5鹵0.2
1.0
1
1
2
3
4
