Power Transistors
2SD1754, 2SD1754A
Silicon NPN triple diffusion planar type
Unit: mm
7.0鹵0.3
3.5鹵0.2
For power amplification with high forward current transfer ratio
7.2鹵0.3
0.8鹵0.2
3.0鹵0.2
1.0鹵0.2
q
q
q
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
80
100
60
80
6
6
3
1
15
1.3
150
鈥?5 to +150
Unit
V
10.0
鈥?.
+0.3
s
Features
1.1鹵0.1
0.75鹵0.1
0.85鹵0.1
0.4鹵0.1
2.3鹵0.2
4.6鹵0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1754
2SD1754A
2SD1754
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25擄C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5鹵0.2
2.0鹵0.2
7.0鹵0.3
Unit: mm
0 to 0.15
3.0鹵0.2
10.2鹵0.3
1.0 max.
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Junction temperature
Storage temperature
V
A
A
A
2.3鹵0.2
0.75鹵0.1
1.1鹵0.1
2.5
0.5 max.
0.9鹵0.1
0 to 0.15
1
2
3
W
藲C
藲C
4.6鹵0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD1754
2SD1754A
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
Conditions
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
30
60
80
500
1500
1
V
MHz
min
typ
max
100
100
100
100
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SD1754
2SD1754A
V
CEO
h
FE*
V
CE(sat)
f
T
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
h
FE
Rank classification
Q
P
Rank
h
FE
500 to 1000 800 to 1500
2.5鹵0.2
1.0
emitter voltage 2SD1754A
V
7.2鹵0.3
2.5鹵0.2
1.0
1
1
2
3
