Power Transistors
2SD1741, 2SD1741A
Silicon NPN triple diffusion planar type
For power amplification
7.2鹵0.3
0.8鹵0.2
Unit: mm
7.0鹵0.3
3.0鹵0.2
3.5鹵0.2
For TV vertical deflection output
Complementary to 2SB1171 and 2SB1171A
1.0鹵0.2
q
q
q
High forward current transfer ratio h
FE
which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
200
200
150
180
6
3
2
15
1.3
150
鈥?5 to +150
Unit
V
10.0
鈥?.
+0.3
s
Features
1.1鹵0.1
0.75鹵0.1
0.85鹵0.1
0.4鹵0.1
2.3鹵0.2
4.6鹵0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1741
2SD1741A
2SD1741
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5鹵0.2
2.0鹵0.2
7.0鹵0.3
Unit: mm
0 to 0.15
3.0鹵0.2
10.2鹵0.3
7.2鹵0.3
1.0 max.
emitter voltage 2SD1741A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
2.5
V
0.75鹵0.1
0.5 max.
0.9鹵0.1
0 to 0.15
2
3
A
A
W
1.1鹵0.1
1
2.3鹵0.2
4.6鹵0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
藲C
藲C
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SD1741
2SD1741A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 50碌A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500碌A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 400mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
20
200
150
180
6
60
50
1
1
V
V
MHz
240
min
typ
max
50
50
Unit
碌A
碌A
V
V
V
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
FE1
Rank classification
Q
60 to 140
P
100 to 240
Rank
h
FE1
1.0
V
2.5鹵0.2
2.5鹵0.2
1.0
1
1
2
