printed circuit board, etc. of small electronic equipment.
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
100
60
15
6
12
3
40
1.3
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
A
W
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
Fall time
Symbol
V
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
25 mA, I
B
=
0
V
CB
= 100
V, I
E
=
0
V
EB
=
15 V, I
C
=
0
V
CE
= 4
V, I
C
=
1 A
I
C
= 5
A, I
B
= 0.1
A
V
CE
=
12 V, I
C
=
0.5 A, f
=
10 MHz
I
C
= 5
A
I
B1
= 0.1
A, I
B2
= 鈭?/div>
0.1 A
V
CC
=
50 V
30
0.3
1.5
0.6
300
Min
60
100
100
2 000
0.5
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
MHz
碌s
碌s
碌s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
300 to 1200
P
800 to 2 000
(7.6)
(1.5)
1.3
14.4
鹵0.5
3.0
+0.4
鈥?.2
1.5
+0
鈥?.4
Publication date: April 2003
SJD00212AED
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