鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
130
80
7
10
20
70
3.0
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
16.2
鹵0.5
5.45
鹵0.3
10.9
鹵0.5
1
2
3
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2 *
h
FE3
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
Base-emitter saturation voltage
V
BE(sat)1
V
BE(sat)2
Transition frequency
Turn-on time
Storage time
Fall time
f
T
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
100 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
3 A
V
CE
=
2 V, I
C
=
6 A
I
C
=
6 A, I
B
=
0.3 A
I
C
=
10 A, I
B
=
1 A
I
C
=
6 A, I
B
=
0.3 A
I
C
=
10 A, I
B
=
1 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
6 A, I
B1
=
0.6 A, I
B2
= 鈭?/div>
0.6 A
V
CC
=
50 V
20
0.5
2.0
0.2
45
90
30
0.5
1.5
1.5
2.5
MHz
碌s
碌s
碌s
V
V
260
Min
80
10
50
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
90 to 180
P
130 to 260
SJD00210BED
Publication date: September 2003
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