Transistor
2SD1679
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s
Features
q
q
q
q
2.8
鈥?.3
0.65鹵0.15
+0.2
1.5
鈥?.05
+0.25
0.65鹵0.15
18V zener diode is built in between collector and base.
Low collector to emitter saturation voltage V
CE(sat)
.
High foward current transfer ratio h
FE
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
0.95
3
0.4
鈥?.05
+0.1
2
1.45
0 to 0.1
1.1
鈥?.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
18鹵5
18鹵5
5
1
0.5
200
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
0.1 to 0.3
0.4鹵0.2
1:Base
2:Emitter
3:Collector
0.8
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
N
Internal Connection
C
B
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
*1
h
FE
Rank classification
E
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 5V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
I
C
= 0.5A, I
B
= 20mA
*2
I
C
= 0.5A, I
B
= 50mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
13
13
5
200
0.13
0.92
170
*2
min
typ
max
100
23
23
0.16
鈥?.06
+0.2
+0.1
Unit
nA
V
V
V
800
0.4
1.2
V
V
MHz
Pulse measurement
Rank
h
FE
Marking Symbol
R
200 ~ 350
NR
S
300 ~ 500
NS
T
400 ~ 800
NT
1
1
2
