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2SD1633 Datasheet

  • 2SD1633

  • Silicon NPN triple diffusion planar type darlington

  • 4頁

  • PANASONIC

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Power Transistors
2SD1633
Silicon NPN triple diffusion planar type darlington
Unit: mm
0.7
鹵0.1
For voltage switching
鈻?/div>
Features
鈥?/div>
High-speed switching
鈥?/div>
Satisfactory linearity of forward current transfer ratio h
FE
鈥?/div>
Full-pack package which can be installed to the heat sink with one screw
16.7
鹵0.3
10.0
鹵0.2
5.5
鹵0.2
4.2
鹵0.2
4.2
鹵0.2
2.7
鹵0.2
7.5
鹵0.2
蠁
3.1
鹵0.1
Solder Dip
(4.0)
14.0
鹵0.5
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
100
100
7
5
8
0.5
30
2.0
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
A
W
1.4
鹵0.1
1.3
鹵0.2
0.5
+0.2
鈥?.1
0.8
鹵0.1
2.54
鹵0.3
5.08
鹵0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
E
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter sustaining voltage
*2
Symbol
Conditions
V
CB
=
100 V, I
E
=
0
V
CE
=
100 V, I
B
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
3 mA
I
C
=
3 A, I
B
=
3 mA
V
CE
=
10 V, I
C
=
1 A, f
=
1 MHz
I
C
=
3 A, I
B1
=
3 mA, I
B2
= 鈭?
mA
V
CC
=
50 V
Min
100
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
V
V
MHz
碌s
碌s
碌s
V
CEO(SUS)
I
C
=
0.2 A, L
=
25 mH
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
100
100
5
1 500
15 000
1.5
2.0
15
3
5
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: V
CEO(SUS)
test circuit
Rank
h
FE
Q
P
1 500 to 6 000 5 000 to 15 000
50 Hz/60 Hz
mercury relay
X
L
Y
1
鈩?/div>
15 V
G
120
鈩?/div>
6V
Publication date: March 2003
SJD00207AED
1

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