Power Transistors
2SD1611
Silicon NPN triple diffusion planar type Darlington
For power amplification
10.0鹵0.3
1.5鹵0.1
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
Unit: mm
1.0鹵0.1
s
Features
q
q
q
1.5max.
1.1max.
High foward current transfer ratio h
FE
High collector to base voltage V
CBO
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.5min.
2.0
0.8鹵0.1
0.5max.
2.54鹵0.3
5.08鹵0.5
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
500
400
5
10
6
40
1.3
150
鈥?5 to +150
Unit
V
10.0鹵0.3
8.5鹵0.2
6.0鹵0.3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
V
V
A
1.5
鈥?.4
2.0
3.0
鈥?.2
A
W
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
藲C
藲C
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
(T
C
=25藲C)
Symbol
I
CBO
V
CEO(sus)
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 350V, I
E
= 0
I
C
= 2A, L = 10mH
I
E
= 0.1A, I
C
= 0
V
CE
= 2V, I
C
= 2A
I
C
= 3A, I
B
= 0.06A
I
C
= 3A, I
B
= 0.06A
V
CE
= 10V, I
C
= 1A, f = 1MHz
15
400
5
500
1.5
2.5
V
V
MHz
min
typ
max
100
Unit
碌A(chǔ)
V
V
Internal Connection
B
C
E
4.4鹵0.5
14.7鹵0.5
+0.4
+0
1
1
2
