Power Transistors
2SD1535
Silicon NPN triple diffusion planar type Darlington
For high power amplification
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
Unit: mm
4.2鹵0.2
s
Features
q
q
q
q
Extremely satisfactory linearity of the forward current transfer
ratio h
FE
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Full-pack package which can be installed to the heat sink with
one screw
7.5鹵0.2
16.7鹵0.3
蠁3.1鹵0.1
4.0
1.4鹵0.1
1.3鹵0.2
14.0鹵0.5
Solder Dip
s
Absolute Maximum Ratings
(T
C
=25藲C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25擄C
P
C
T
j
T
stg
Ratings
500
400
12
14
7
0.5
50
2
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
藲C
藲C
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Junction temperature
Storage temperature
5.08鹵0.5
1
2
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
3
Internal Connection
C
B
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
V
CEO(sus)
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO(sus)
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
*
Conditions
V
CB
= 500V, I
E
= 0
V
CE
= 400V, I
B
= 0
V
EB
= 12V, I
C
= 0
I
C
= 100mA, R
BZ
=
鈭?
L = 25mH
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 6A
I
C
= 7A, I
B
= 70mA
I
C
= 7A, I
B
= 70mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 7A, I
B1
= 70mA, I
B2
= 鈥?0mA,
V
CC
= 300V
X
L 25mH
Y
min
typ
max
0.1
0.1
100
Unit
mA
mA
mA
mA
400
500
200
2.0
2.5
20
1.5
5.0
6.5
V
V
MHz
碌s
碌s
碌s
Test circuit
60Hz
I
C
(A)
0.2
0.1
80
V
CE
(V)
1
2
