Transistor
2SD1512
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.0鹵0.2
3.0鹵0.2
0.7鹵0.1
s
Features
q
q
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
100
100
15
50
20
300
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 100V, I
E
= 0
V
CE
= 60V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
100
100
15
400
0.05
200
80
1200
0.2
V
MHz
mV
min
typ
max
0.1
1.0
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
R
400 ~ 800
S
600 ~ 1200
h
FE
Rank
2.0鹵0.2
(Ta=25藲C)
marking
+0.2
0.45鈥?.1
s
Absolute Maximum Ratings
15.6鹵0.5
Allowing supply with the radial taping.
High foward current transfer ratio h
FE
.
1
1
2
