Transistor
2SD1458
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9鹵0.1
1.5
0.4
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
s
Features
q
q
q
1.5 R0.9
R0.9
0.85
0.55鹵0.1
0.45鹵0.05
1.25鹵0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25藲C)
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
20
20
15
1.5
0.7
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?1
M Type Mold Package
2.5
2.5
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
*
I
C
= 500mA, I
B
= 50mA
*
V
CB
= 20V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
55
11
*2
min
typ
max
1
10
20
20
15
1000
2500
0.4
4.1鹵0.2
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0鹵0.1
R
0.
4.5鹵0.1
7
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
V
MHz
15
pF
Pulse measurement
1
1
2
3
