Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
15.0鹵0.3
11.0鹵0.2
Unit: mm
5.0鹵0.2
3.2
s
Features
q
q
q
16.2鹵0.5
12.5
3.5
Solder Dip
High foward current transfer ratio h
FE
High collector to base voltage V
CBO
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
200
150
200
5
10
6
60
3
150
鈥?5 to +150
Unit
V
0.7
21.0鹵0.5
15.0鹵0.2
蠁3.2鹵0.1
2.0鹵0.2
2.0鹵0.1
1.1鹵0.1
5.45鹵0.3
10.9鹵0.5
1
2
3
0.6鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to
2SD1457
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SD1457A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
B
1:Base
2:Collector
3:Emitter
TOP鈥? Full Pack Package(a)
Internal Connection
C
藲C
藲C
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
(T
C
=25藲C)
Symbol
I
CBO
V
CEO(sus)
V
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
I
C
= 2A, L = 10mH
I
E
= 0.1A, I
C
= 0
V
CE
= 2V, I
C
= 2A
I
C
= 3A, I
B
= 0.06A
I
C
= 3A, I
B
= 0.06A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
15
150
5
700
10000
1.5
2.5
V
V
MHz
min
typ
max
100
Unit
碌A(chǔ)
V
V
*
h
FE
Rank classification
Q
P
O
Rank
h
FE
700 to 2500 2000 to 5000 4000 to 10000
1
1
2
