Power Transistors
2SD1327
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Unit: mm
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
4.2鹵0.2
s
Features
q
q
q
q
q
14.0鹵0.5
Incorporating a zener diode of 60V zener voltage between col-
lector and base
Minimized variation in the breakdown voltage
Large energy handling capability
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
60鹵10
60鹵10
7
12
8
45
2
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
16.7鹵0.3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Solder Dip
4.0
7.5鹵0.2
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
3
Internal Connection
C
B
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
*1
h
FE1
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
E
s/b*2
Conditions
V
CB
= 50V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 5mA, I
B
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4A, I
B
= 8mA
I
C
= 4A, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 8mA, I
B2
= 鈥?mA,
V
CC
= 50V
I
C
= 1A, L = 100mH, R
BE
= 100鈩?/div>
*2
E
s/b
min
typ
max
100
2
Unit
碌A
mA
V
50
2000
500
70
10000
1.5
2
20
0.5
4
1
50
V
V
MHz
碌s
碌s
碌s
mJ
Rank classification
Q
P
Test circuit
X
L
Y
R
BE
1鈩?/div>
G
Rank
h
FE1
60Hz mercury relay
2000 to 5000 4000 to 10000
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