Power Transistors
2SB968
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification
Complementary to 2SD1295
7.3鹵0.1
1.8鹵0.1
6.5鹵0.1
5.3鹵0.1
4.35鹵0.1
2.3鹵0.1
0.5鹵0.1
0.8max
q
q
q
Possible to solder the radiation fin directly to printed cicuit board
High collector to emitter V
CEO
Large collector power dissipation P
C
2.5鹵0.1
0.93鹵0.1
1.0鹵0.1
0.1鹵0.05
0.5鹵0.1
0.75鹵0.1
2.3鹵0.1
4.6鹵0.1
s
1
2
3
Absolute Maximum Ratings
(Ta=25藲C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?0
鈥?0
鈥?
鈥?
鈥?.5
20
150
鈥?5 to +150
Unit
V
V
V
A
A
W
0.6
2.3
2.3
0.75
6.5鹵0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25擄C)
Junction temperature
Storage temperature
藲C
藲C
1
2
3
2.3鹵0.1
0.5鹵0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?3
U Type Package (Z)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?mA, I
E
= 0
I
C
= 鈥?mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?.5A, I
B
= 鈥?0.15A
I
C
= 鈥?A, I
B
= 鈥?0.2A
V
CB
= 鈥?V, I
E
= 0.5A, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
150
45
鈥?0
鈥?0
50
220
鈥?
鈥?.5
V
V
MHz
pF
min
typ
max
鈥?
鈥?00
鈥?0
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
V
*
h
FE
Rank classification
P
50 to 100
Q
80 to 160
R
120 to 220
Rank
h
FE
6.0
5.5鹵0.2
13.3鹵0.3
Collector to emitter voltage
1.8
Collector to base voltage
1.0鹵0.2
s
Features
1
1
2
3
