Transistor
2SD1280
Silicon NPN epitaxial planer type
For low-voltage type medium output power amplification
Unit: mm
s
Features
q
q
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
q
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25藲C)
Ratings
20
20
5
2
1
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
2.6鹵0.1
0.4max.
45擄
1.0
鈥?.2
+0.1
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
4.0
鈥?.20
0.4鹵0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?2
Mini Power Type Package
Marking symbol :
R
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
BE(sat)
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 500mA
*2
V
CE
= 2V, I
C
= 1.5A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 1A, I
B
= 50mA
*2
V
CB
= 6V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
150
18
*2
min
typ
max
1
Unit
碌A(chǔ)
V
V
20
5
90
50
150
100
1.2
0.5
360
MHz
pF
Pulse measurement
FE1
Rank classification
Rank
h
FE1
Q
90 ~ 155
RQ
R
130 ~ 210
RR
S
180 ~ 280
RS
T
250 ~ 360
RT
Marking Symbol
2.5鹵0.1
+0.25
V
V
1
1
2
3
