Power Transistors
2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
4.2鹵0.2
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
Unit: mm
7.5鹵0.2
s
Features
q
q
q
High foward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
鈥?0
鈥?0
鈥?0
鈥?0
鈥?
鈥?
鈥?
40
2
150
鈥?5 to +150
Unit
V
16.7鹵0.3
蠁3.1鹵0.1
14.0鹵0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB950
2SB950A
2SB950
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
4.0
1.4鹵0.1
1.3鹵0.2
Solder Dip
0.5
鈥?.1
0.8鹵0.1
+0.2
2.54鹵0.25
5.08鹵0.5
1
2
emitter voltage 2SB950A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
藲C
藲C
B
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
3
Internal Connection
C
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB950
2SB950A
2SB950
2SB950A
2SB950
2SB950A
E
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)1
V
CE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?0.5A
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?2mA
I
C
= 鈥?A, I
B
= 鈥?0mA
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 1MHz
I
C
= 鈥?A, I
B1
= 鈥?2mA, I
B2
= 12mA,
V
CC
= 鈥?0V
20
0.3
2
0.5
鈥?0
鈥?0
1000
2000
10000
鈥?.5
鈥?
鈥?
V
V
V
MHz
碌s
碌s
碌s
min
typ
max
鈥?00
鈥?00
鈥?00
鈥?00
鈥?
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
P
2000 to 5000 4000 to 10000
Rank
h
FE2
1
1
2
