Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
0.7鹵0.1
s
Features
q
q
q
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
4.2鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
2SD1274
2SD1274A
2SD1274B
2SD1274
2SD1274A
2SD1274B
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
V
CES
V
CBO
Symbol
(T
C
=25藲C)
Ratings
150
200
250
2.54鹵0.25
16.7鹵0.3
High collector to base voltage V
CBO
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
7.5鹵0.2
Unit
14.0鹵0.5
Solder Dip
4.0
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
V
Collector to
emitter voltage
150
200
250
80
6
5
40
2
150
鈥?5 to +150
V
V
A
W
藲C
藲C
V
5.08鹵0.5
1
2
3
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD1274
2SD1274A
2SD1274B
(T
C
=25藲C)
Symbol
Conditions
V
CB
= 150V, I
E
= 0
I
CBO
V
CEO(sus)
V
EBO
h
FE
V
BE
V
CE(sat)
f
T
t
f
*
min
typ
max
1
1
1
Unit
V
CB
= 200V, I
E
= 0
V
CB
= 250V, I
E
= 0
I
C
= 0.2A, L = 25mH
I
E
= 1mA, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
= 4V, I
C
= 5A
I
C
= 5A, I
B
= 1A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 5A, I
B1
= 0.8A, V
EB
= 鈥?V
X
L 25mH
Y
I
C
(A)
0.2
0.1
80
V
CE
(V)
mA
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Fall time
*
V
CEO(sus)
80
6
14
1.5
1.6
40
1
V
V
V
V
MHz
碌s
Test circuit
60Hz
1
2
3
