Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Complementary to 2SB1299
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
Unit: mm
4.2鹵0.2
s
Features
q
q
q
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
7.5鹵0.2
16.7鹵0.3
蠁3.1鹵0.1
14.0鹵0.5
s
4.0
Absolute Maximum Ratings
(T
C
=25藲C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25擄C
P
C
T
j
T
stg
Ratings
80
100
60
80
6
6
3
1
40
2
150
鈥?5 to +150
Unit
V
2SD1273
2SD1273A
2SD1273
1.4鹵0.1
1.3鹵0.2
Solder Dip
0.5
+0.2
鈥?.1
0.8鹵0.1
Collector to
base voltage
Collector to
2.54鹵0.25
5.08鹵0.5
emitter voltage 2SD1273A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Junction temperature
Storage temperature
V
V
A
A
A
W
藲C
藲C
1
2
3
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD1273
2SD1273A
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
Conditions
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
CB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
50
60
80
500
2500
1
V
MHz
min
typ
max
100
100
100
100
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SD1273
2SD1273A
V
CEO
h
FE*
V
CE(sat)
f
T
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
h
FE
Rank classification
Q
P
O
h
FE
500 to 1000 800 to 1500 1200 to 2500
Rank
Note: Ordering can be made by the common rank (PQ rank h
FE
= 500 to 1500) in the rank classification.
1
1
2
