Power Transistors
2SD1272
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
Unit: mm
4.2鹵0.2
s
Features
q
q
q
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
7.5鹵0.2
16.7鹵0.3
蠁3.1鹵0.1
14.0鹵0.5
s
4.0
Absolute Maximum Ratings
(T
C
=25藲C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25擄C
P
C
T
j
T
stg
Ratings
200
150
6
2.5
1
0.1
40
2
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
藲C
藲C
1.4鹵0.1
1.3鹵0.2
Solder Dip
0.5
+0.2
鈥?.1
0.8鹵0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Junction temperature
Storage temperature
2.54鹵0.25
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.2A
I
C
= 0.5A, I
B
= 0.02A
V
CE
= 4V, I
C
= 0.1A, f = 10MHz
25
150
500
2000
1
V
MHz
min
typ
max
100
100
Unit
碌A(chǔ)
碌A(chǔ)
V
*
h
FE
Rank classification
Q
P
Rank
h
FE
500 to 1200 800 to 2000
1
1
2
