Power Transistors
2SD1267, 2SD1267A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB942 and 2SB942A
Unit: mm
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
4.2鹵0.2
s
Features
q
q
q
7.5鹵0.2
Solder Dip
4.0
14.0鹵0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1267
2SD1267A
2SD1267
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
60
80
60
80
5
8
4
40
2
150
鈥?5 to +150
Unit
V
emitter voltage 2SD1267A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
藲C
藲C
16.7鹵0.3
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1267
2SD1267A
2SD1267
2SD1267A
2SD1267
2SD1267A
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, V
BE
= 0
V
CB
= 80V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 4A, I
B
= 0.4A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 0.4A, I
B2
= 鈥?0.4A,
V
CC
= 50V
20
0.4
1.2
0.5
60
80
70
15
2
1.5
V
V
MHz
碌s
碌s
碌s
250
min
typ
max
400
400
700
700
1
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
1
1
2
