Power Transistors
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
For TV vertical deflection output
0.7鹵0.1
Unit: mm
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
4.2鹵0.2
Complementary to 2SB940 and 2SB940A
q
q
q
(T
C
=25藲C)
Ratings
200
150
180
6
3
2
30
2
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
Parameter
Collector to base voltage
Collector to
2SD1264
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SD1264A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Solder Dip
s
Absolute Maximum Ratings
14.0鹵0.5
4.0
High collector to emitter V
CEO
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with
one screw
16.7鹵0.3
7.5鹵0.2
s
Features
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SD1264
2SD1264A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
*
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 50碌A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500碌A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 400mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
min
typ
max
50
50
Unit
碌A
碌A
V
V
V
200
150
180
6
60
50
1
1
20
240
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
FE1
V
V
MHz
Rank classification
Q
60 to 140
P
100 to 240
Rank
h
FE1
1
1
2
