Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
0.7鹵0.1
Unit: mm
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
4.2鹵0.2
Complementary to 2SD1264 and 2SD1264A
q
q
16.7鹵0.3
14.0鹵0.5
q
High collector to emitter voltage V
CEO
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
鈥?00
鈥?00
鈥?50
鈥?80
鈥?
鈥?
鈥?
30
2
150
鈥?5 to +150
Unit
V
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB940
2SB940A
2SB940
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SB940A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
藲C
藲C
Solder Dip
4.0
7.5鹵0.2
s
Features
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SB940
2SB940A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 鈥?00V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?00碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?50mA
V
CE
= 鈥?0V, I
C
= 鈥?00mA
V
CE
= 鈥?0V, I
C
= 鈥?00mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 10MHz
30
鈥?00
鈥?50
鈥?80
鈥?
60
50
鈥?
鈥?
V
V
MHz
240
min
typ
max
鈥?0
鈥?0
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
FE1
Rank classification
Q
60 to 140
P
100 to 240
Rank
h
FE1
1
1
2
