Power Transistors
2SD1262, 2SD1262A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Complementary to 2SB939 and 2SB939A
10.0鹵0.3
1.5鹵0.1
Unit: mm
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
1.0鹵0.1
s
Features
q
q
q
High foward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
60
80
60
80
7
12
8
45
1.3
150
鈥?5 to +150
Unit
V
1.5max.
10.5min.
2.0
1.1max.
0.8鹵0.1
0.5max.
2.54鹵0.3
5.08鹵0.5
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1262
2SD1262A
2SD1262
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
6.0鹵0.3
10.0鹵0.3
emitter voltage 2SD1262A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
1.5
鈥?.4
3.0
鈥?.2
V
A
A
W
藲C
藲C
2.0
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
2SD1262
2SD1262A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4A, I
B
= 8mA
I
C
= 4A, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 8mA, I
B2
= 鈥?mA,
V
CC
= 50V
20
0.5
4
1
60
80
1000
500
1.5
2
V
V
MHz
碌s
碌s
碌s
10000
min
typ
max
100
100
2
Unit
碌A(chǔ)
mA
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
R
Q
P
1000 to 2500 2000 to 5000 4000 to 10000
Internal Connection
B
C
Rank
h
FE1
E
4.4鹵0.5
14.7鹵0.5
+0.4
+0
1
1
2
