Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262 and 2SD1262A
10.0鹵0.3
1.5鹵0.1
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
Unit: mm
1.0鹵0.1
s
Features
q
q
q
High foward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
1.5max.
1.1max.
10.5min.
2.0
0.8鹵0.1
0.5max.
s
2.54鹵0.3
Absolute Maximum Ratings
(T
C
=25藲C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?0
鈥?0
鈥?0
鈥?0
鈥?
鈥?2
鈥?
45
1.3
150
鈥?5 to +150
Unit
V
2SB939
2SB939A
2SB939
5.08鹵0.5
1
2
3
Collector to
base voltage
Collector to
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
emitter voltage 2SB939A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
10.0鹵0.3
6.0鹵0.3
1.5
鈥?.4
2.0
3.0
鈥?.2
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
藲C
藲C
1
2
3
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB939
2SB939A
2SB939
2SB939A
1:Base
2:Collector
3:Emitter
N Type Package (DS)
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CB
= 鈥?0V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?mA
I
C
= 鈥?A, I
B
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 1MHz
I
C
= 鈥?A, I
B1
= 鈥?mA, I
B2
= 8mA,
V
CC
= 鈥?0V
15
0.5
2
1
C
min
typ
max
鈥?00
鈥?00
鈥?
4.4鹵0.5
Unit
碌A(chǔ)
mA
V
鈥?0
鈥?0
2000
500
鈥?.5
鈥?
10000
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
V
V
MHz
碌s
碌s
碌s
Rank classification
Q
P
2000 to 5000 4000 to 10000
Internal Connection
B
Rank
h
FE1
E
14.7鹵0.5
+0.4
+0
1
1
2
3
